个人简介
陈杰智，山东大学信息科学与工程学院院长，教授/博士生导师，国家海外青年特聘专家,山东省杰出青年基金获得者，研究方向聚焦于集成电路存储芯片及纳米器件关键技术。近年来，主持了国家自然科学基金委重点项目、重大研究计划项目、科技部重点研发项目课题等多项国家级研究项目课题，原创性提出了氘界面缺陷精准调控、超高速硬件数据检索、高精度存算融合设计等集成电路存储芯片的核心关键技术，二十二次在微电子集成电路国际顶级会议IEDM/VLSI Symposium上报告研究进展，授权美国/日本发明专利二十二项，授权中国发明专利九项。担任集成电路微电子领域多个国际顶级学术会议IEDM、IMW、IRPS的主席/技术委员。
代表成果
[1]"Temperature-dependent Defect Behaviors in Ferroelectric Hf0.5Zr0.5O2 Thin Film: Re-wakeup Phenomenon and Underlying Mechanisms,"2022 IEDM Tech. Dig., 32.3.1-4;
[2]"Design-Technology Co-Optimizations (DTCO) for General-Purpose In-Memory Computation Based on 55nm NOR Flash Technology"2021 IEDM Tech. Dig., 12.1.1-4;
[3]"In-depth Understanding of Polarization Switching Kinetics in Polycrystalline Hf0.5Zr0.5O2 Ferroelectric Thin Film: A Transition from NLS to KAI,"2021 IEDM Tech. Dig., 19.1.1-4;
[4]"Two-Dimensional Silicon Atomic Layer Field-Effect Transistors: Electronic Property, Metal-Semiconductor Contact, and Device Performance,"2021 IEDM Tech. Dig., 27.2.1-4;
[5]“Deep Insights into the Failure Mechanisms in Field-cycled Ferroelectric Hf0.5Zr0.5O2 Thin Film: TDDB Characterizations and First-Principles Calculations”2020 IEDM Tech. Dig., 39.6.1-4;
